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| LESHAN RADIO COMPANY, LTD. Digital transistors (built-in resistors) LDTA123JET1 FEATURES: 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. 3 1 2 SC-89 STRUCTURE: PNP digital transistor (Built-in resistor type) PIN 1 BASE (INPUT) R1 R2 PIN 3 COLLECTOR (OUTPUT) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc PIN 2 EMITTER (GROUND) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (Note 1.) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation, FR-4 Board (Note 2.) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 Inch Pad Symbol PD 200 1.6 RJA PD 300 2.4 RJA TJ, Tstg 400 -55 to +150 mW mW/C C/W C 600 mW mW/C C/W Max Unit DEVICE MARKING LDTA123JET1=6M LDTA123JET1-1/3 LESHAN RADIO COMPANY, LTD. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Curren (VEB = 6.0 V, IC = 0) Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) ICBO ICEO IEBO V(BR)CBO V(BR)CEO - - - 50 50 - - - - - 100 500 0.5 - - nAdc nAdc mAdc Vdc Vdc ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) Input Resistor Resistor Ratio hFE VCE(sat) R1 R1/R2 80 140 - - 1.54 0.038 - 2.2 0.047 0.25 2.86 0.056 Vdc k 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 50 0 -50 RJA = 600C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 2. Normalized Thermal Response LDTA123JET1-2/3 LESHAN RADIO COMPANY, LTD. SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. LDTA123JET1-3/3 |
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